Chemical mechanical polishing compositions for metal and associated materials and method of using same
AssigneeAdvanced Technology Materials, Inc.
InventorsYing Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma
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Abstract
A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
Claims39
A chemical mechanical polishing slurry for polishing a metal film, said slurry having a pH in a range of from about 0.1 to 6.9, and comprising (i) an abrasive consisting essentially of an organic polymer abrasive having a Moh's hardness of between 2 and 8, a particle size in a range of from about 3 to 100 nm, and a mean particle size in a range of from about 20 to 80 nm and (ii) a passivating agent selected from the group consisting of carboxylic acids, cystine, haloacetic acids, glucose and dodecyl mercaptan.
Dependencies are inferred from the claim text.