Current-compensated CMOS output buffer adjusting edge rate for process, temperature, and Vcc variations
AssigneePericom Semiconductor Corp.
InventorChoy Kwok Wing
Life of this patent
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AssigneePericom Semiconductor Corp.
InventorChoy Kwok Wing
Estimating the term…
Edge rates for output driver transistors are increased for slower conditions such as caused by supply-voltage, temperature, and process variations. The edge rates are increased by increasing charging and discharging currents to the gates of the driver transistors. Process-sensing transistors have gates tied to power or ground. Current through the process-sensing transistors changes with supply-voltage, temperature, and process variations. The currents through process-sensing transistors are used to generate process-compensated voltages that bias current sources and sinks to adjust process-dependent currents. Process-independent or fixed current sources and sinks use process-independent reference voltages ultimately generated from reference currents that are not sensitive to process variations. The process-dependent-currents are subtracted from the fixed currents to produce the charging and discharging currents.
A process-compensated output buffer comprising:
A buffer having internal currents compensated for supply-voltage, temperature, and process variations comprising:
A compensated output buffer comprising:
Dependencies are inferred from the claim text.