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US 6,690,041 B2Granted
Monolithically integrated diodes in thin-film photovoltaic devices
AssigneeGlobal Solar Energy, Inc.
InventorsJoseph H. Armstrong, Scott Wiedeman, Lawrence M. Woods
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Abstract
The present invention relates to the design of and includes monolithically integrated diodes for use in planar, thin-film, photovoltaic devices, such as solar cells.
Claims17
An apparatus for use as a diode comprising
- a substrate layer,
- a conductive layer deposited on said substrate layer,
- an p-type absorber layer deposited on said conductive layer,
- a n-type window layer deposited on said p-type absorber layer,
- a first trench area on said substrate layer, and formed into said conductive layer, said p-type absorber layer, and said n-type window layer;
- an electrical insulator layer deposited on said first trench area;
- a second trench area parallel to said first trench area, on said conductive layer and formed into said p-type absorber layer and said n-type window layer;
- a translucent conductive layer deposited on said n-type window layer, said electrical insulator, and said second trench area;
- a third trench area near said second trench area, on said conductive, layer and formed into said p-type absorber layer, said n-type window layer, and said translucent conductive layer;
- and
- an opaque layer deposited on a portion of said translucent conductive layer.
8 more elements
Dependencies are inferred from the claim text.