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AssigneeCypress Semiconductor Corporation
InventorsSantosh Kumar, Edmund L. Russell
Estimating the term…
A method and computer aided system for predicting the reliability of oxide-nitride-oxide (ONO) based non-volatile memory. ONO memory devices may be programmed. Margin voltages may be recorded initially, and during baking at 100 degrees C. and 300 degrees C. From this data, constants and activation energy may be determined through a first formula. Frenkel-Poole activation energy may be determined. Through the use of a second formula, decay time of the information stored in the ONO memory may be predicted from the activation energy. The first formula may also be used to predict the decay time. The two decay time predictions may be compared to establish confidence. In this manner, data retention of an ONO memory may be reliably predicted.
In a computer system, a method for predicting the data retention time of a bit stored in an oxide-nitride-oxide non-volatile memory comprising:
A computer implemented method of sorting integrated circuits is comprising:
A method of demonstrating the data retention of oxide-nitride-oxide memory comprising:
A computer system comprising:
A computer implemented method of predicting the data retention time of an oxide-nitride-oxide based non-volatile memory comprising:
Dependencies are inferred from the claim text.