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US 6,687,276 B2Granted
Surface emitting semiconductor laser
AssigneeKabushiki Kaisha Toshiba
InventorAkira Tanaka
Life of this patent
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Abstract
A surface emitting semiconductor laser capable of improving high temperature properties is provided. In a surface emitting semiconductor laser, as well width of an active layer is set at from 4 nm to 6 nm and the number of wells thereof is set at one or two In addition, above and below the active layer, InGaAlP clad layers are formed, and in a stacking direction of the active layer, through the above and below clad layers each, further above and below thereof, light reflecting layers are formed.
Claims18
A surface emitting semiconductor laser comprising:
- an active layer having an InGaP/InGaAlP quantum well structure of which well width is from 4 nm to 6 nm and number of wells is one or two;
- InGaAlP clad layers formed above and below the active layer;
- and
- light reflecting layers that are stacked, in a stacking direction of the active layer, through the above and below clad layers each, further above and below the clad layers, wherein the light reflecting layer each being a DBR multi-layer film in which a Ga1−xAlxAs film (herein 0.9≧x≧0.5) and a Ga1−yAlyAs film (herein y≧0.9) are alternately stacked.
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A surface emitting semiconductor laser comprising:
- an active layer having an InGaP/InGaAlP quantum well structure of which well width is from 4 nm to 6 nm and number of wells is one or two;
- InGaAlP clad layers formed above and below the active layer;
- and
- light reflecting layers that are stacked, in a stacking direction of the active layer, through the above and below clad layers each, further above and below the clad layers, wherein the light reflecting layer each is a DBR multi-layer film in which an In0.5(Ga1−xAlx)0.5P film (herein x≦0.5) and an In0.5(Ga1−yAly)0.5P film (herein y≧0.9) are alternately stacked.
1 more element
Dependencies are inferred from the claim text.