Semiconductor laser device
AssigneeKabushiki Kaisha Toshiba
InventorsHiroshi Hamasaki, Hideto Furuyama
Life of this patent
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Abstract
A semiconductor laser device comprising a mount substrate, a semiconductor laser element, and a total reflection mirror. The substrate includes an n-type Si substrate, an i-type Si layer deposited on a part of the Si substrate, and a p-type Si layer deposited on the Si layer. The Si substrate and Si layers constitute a pin photodiode. A part of the sides of the Si layers is a sloping surface. The laser element is mounted on the substrate and has a light-emitting surface opposing the sloping surface. The mirror is provided on a part of the sloping surface. It reflects and outputs a central part of a light beam emitted from the laser element. It guides the remaining part of the light beam to the photodiode.
Claims21
A semiconductor laser device comprising:
- a semiconductor laser element, having a light-emitting surface, configured to emit a light beam from the light-emitting surface, the light beam including a central part and an another part;
- a mount structure configured to mount the semiconductor laser element, including a semiconductor substrate having a surface, and a semiconductor layer having a sloping surface opposed to the light-emitting surface and deposited on a part of the surface of the semiconductor substrate to form a light-sensitive element having a light-receiving section on a part of the sloping surface, said light-sensitive element configured to receive the another part of the light beam from the light-emitting surface;
- and
- a total reflection mirror provided on the sloping surface of the semiconductor layer and extending in a direction perpendicular to the direction in which the sloping surface is inclined, said total reflecting mirror positioned vertically on the sloping surface to reflect and output the central part of the light beam while allowing the another part of the light beam to enter the semiconducting layer.
A semiconductor laser device comprising:
- a mount structure comprising a semiconductor substrate having a recess to form a light-sensitive element, said recess provided in a part of said semiconductor substrate and having at least one sloping surface, and said light-sensitive element located outside the recess and having a light-receiving section at a part of the sloping surface;
- a semiconductor laser element mounted on bottom surface of the recess and having a light-emitting surface which opposes the sloping surface;
- and
- a total reflection mirror provided on a part of the sloping surface, extending in a direction perpendicular to a direction in which the sloping surface is inclined and arranged to reflect and output a part of a light beam emitted from the semiconductor laser element, including at least a central part of the light beam, and to allow a remaining part of the light beam to reach the light-receiving section of the light-sensitive element.
A semiconductor laser device comprising:
- a mount structure comprising a Si substrate having a main surface and doped with impurities of a first conductivity type in high concentration, a first Si layer provided on the main surface of the Si substrate and doped with impurities in low concentration and
- a second Si layer provided on the first Si layer and doped with impurities of a second conductivity type in high concentration, a sloping surface being formed at a side part of each of said first and second Si layers,
- said Si substrate having a trench on the side of the main surface, said trench having a surface that continues to the sloping surface;
- said Si substrate, said first Si layer and said second Si layer constituting a pin photodiode having a light-receiving surface located in the sloping surfaces;
- a semiconductor laser element mounted on the mount structure and having a light-emitting surface which opposes the sloping surface;
- and
- a total reflection mirror provided on the sloping surface and arranged to reflect and output a part of a light beam emitted from the semiconductor laser element, including at least a central part of the light beam, and to allow a remaining part of the light beam to reach the first Si layer, and having a slit-shaped opening made in the sloping surface and extending in a direction perpendicular to a direction in which the sloping surface is inclined.
Dependencies are inferred from the claim text.