Circuit for testing ferroelectric capacitor in FRAM
AssigneeHynix Semiconductor Inc.
InventorsHee Bok Kang, Hun Woo Kye, Duck Ju Kim, Je Hoon Park, Geun Il Lee
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AssigneeHynix Semiconductor Inc.
InventorsHee Bok Kang, Hun Woo Kye, Duck Ju Kim, Je Hoon Park, Geun Il Lee
Estimating the term…
A circuit for testing a ferroelectric capacitor in a FRAM includes: a test pulse signal generating part; a digital test pulse providing part, responsive to the test pulse signal; an n-bit counter, responsive to the digital test pulse signal as a clock signal; a measuring control signal providing part; a write pulse bar signal generating part; an input drive control part for receiving a reference voltage signal, a voltage signal at the first electrode of the ferroelectric capacitor, the measuring control signal, and the write pulse bar signal, and applying a driving voltage to the second electrode of the ferroelectric capacitor in response to the test pulse signal, and a measured result forwarding part for receiving the reference voltage signal and the voltage signal from the first electrode, and amplifying and forwarding a voltage variation between the electrodes of the ferroelectric capacitor.
A circuit for testing a ferroelectric capacitor in a ferroelectric random access memory (FRAM) for storing a data at the ferroelectric capacitor, comprising:
A circuit for testing a ferroelectric capacitor in an FRAM for storing data in the ferroelectric capacitor, comprising:
A circuit for testing a ferroelectric capacitor in an FRAM for storing data in the ferroelectric capacitor, comprising:
Dependencies are inferred from the claim text.