Reference current generation circuit for multiple bit flash memory
AssigneeMacronix International Co., Ltd.
InventorsTso-Hung Fan, Chih-Chieh Yeh, Tao-Cheng Lu
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Abstract
A reference current generation circuit for the multiple bit flash memory provided by the present invention applies the same boosted word-line voltage to the gates of different reference current generation unit's reference cells, and uses different gate lengths from different reference cells to obtain the reference currents with different levels that are needed. Therefore, it effectively solves the problem of the reference currents having different drifts along with the variance of the temperature and the power voltage Vcc.
Claims6
A reference current generation circuit, suitable for a multiple bit flash memory, comprising a plurality of reference current generation units, each of the reference current generation units comprising:
- a load, having a first connection terminal and a second connection terminal, wherein the first connection terminal couples to an operating power;
- and
- a reference cell, having a gate, a first source/drain, and a second source/drain, wherein the first source/drain couples to the second connection terminal, the second source/drain is grounded, the gate couples to a boosted word-line voltage;
- wherein the gate of each of the reference current generation units couples to the same boosted word-line voltage, and a gate width of the reference cell for each of the reference current generation units is different according to a magnitude of the reference current that needs to be generated by the reference current generation units.
Dependencies are inferred from the claim text.