Cubic memory array with diagonal select lines

A method of creating a memory circuit, comprising:

• forming a first plurality of select-lines in a plane substantially parallel to a substrate;
• forming a second plurality of select-lines in a plane substantially parallel to said substrate, said second plurality of select-lines being divided into first and second groups, wherein said first group is formed in a direction normal to that of said first plurality of select-lines, and said second group is formed in a direction substantially diagonal to that of said first group;
• forming a plurality of pillars normal to said substrate;
• and
• forming an array of memory cells, each memory cell being respectively coupled to a pillar and one of each of said first and second pluralities of select-lines.

A cubic memory array, comprising:

• storage means for storing digital data;
• and
• control means for reading and writing digital data in said storage means, said control means comprising a plurality of selection lines connected to memory cells in said storage means;
• and
• means for reducing cross-coupling between said selection lines.