Semiconductor integrated circuit device
AssigneeRohm Co., Ltd.
InventorsIsao Yamamoto, Koichi Miyanaga
Life of this patent
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Abstract
Using the leakage current of the base resistance of the bipolar transistor, semiconductor integrated circuit device which detects an overheat condition of the elements protected from overheat, is realized. The overheat detection circuit and the elements or the circuits which might be protected from overheat, are formed on the same substrate. The said overheat detection circuit is comprised of a bipolar transistor, its base resistance, and a constant-voltage source. The constant-voltage source provides a certain voltage to isolate the elements. The joint base resistance is located close to elements or circuits which might be protected from overheat and located far from the constant-voltage source.
Claims10
A semiconductor integrated circuit device comprising:
- a substrate
- an overheat detection circuit formed on said substrate, and
- elements or circuits that are formed on the same substrate as said overheat protection circuit and comprise overheat protected elements or circuits,
- said overheat detection circuit having an n-type or p-type well region formed in said substrate and a p-type or n-type semiconductor as a resistance layer formed in the n-type or p-type well region, said n-type or p-type well region being operative to isolate said p-type or n-type semiconductor from other elements or circuits formed on said substrate and serving as an input terminal for detection of leakage current to said resistance layer, said n-type or p-type well region being reversely biased by a stable constant-voltage source.
Dependencies are inferred from the claim text.