US 6,686,662 B2 · Semiconductor device barrier layer

Abstract

A barrier layer for a semiconductor device metallization component provides a silicon nitride film formed in a component recess and a refractory metal film formed over the silicon nitride film. The device component includes a dielectric material and a recess formed in the dielectric. The surface of the dielectric material within the recess is exposed to nitrogen under controlled parameters. A section of the dielectric material adjacent an interior of the recess is converted to silicon nitride. The refractory metal is then conformed deposited along the recess sidewalls. A seed layer is then deposited over the refractory metal film, and a conductive metal is then deposited within the recess. The device is then polished to remove excess metal outside the recess and planarize the device.

Claims19

Dependent claims

A semiconductor device, comprising:

(a) a dielectric material having at least two layers and an etch stop layer interposed between the two layers of dielectric material and a recess is formed in the two layers of the dielectric material and the etch stop layer, forming a plurality of surfaces of the dielectric material within the recess that are spaced apart by the etch stop layer;
(b) a silicon nitride film disposed along each surface of the dielectric material within the recess in the dielectric material but not along the surface of the etch stop layer within the recess;
and
(c) a refractory metal film overlaying the silicon nitride film.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device barrier layer

Life of this patent

Semiconductor device barrier layer

Life of this patent

Abstract

Claims19