Back to results
US 6,686,661 B1Granted
Thin film transistor having a copper alloy wire
AssigneeLG. Philips LCD Co., Ltd.
InventorsJae Gab Lee, Heung Lyul Cho
Life of this patent
Estimating the term…
Abstract
A thin film transistor and a method of manufacturing the same includes forming a copper alloy line on substrate, an oxidation film formed on the upper surface of the copper alloy line. The copper alloy line includes a concentration y of magnesium, and the copper alloy line has a thickness t. the concentration y of magnesium in copper alloy line is related to the thickness is as follows: y ≤ 94 t .
Claims15
A thin film transistor for a liquid crystal display device, comprising:
- a substrate for the liquid crystal display device;
- a heat treated copper alloy line on an upper surface of said substrate said heat treatment having been performed at temperatures between 350 and 500 degrees C.;
- and
- an oxidation film on an upper surface of said copper alloy line;
- wherein said copper alloy line includes magnesium of y (atomic %) concentration and having a thickness t (Å), wherein the concentration y (atomic %) of magnesium in said copper alloy line in relation to the thickness t (Å) is as follows:
- y≦94/t,
- said line being substantially free of migrations and hillocks despite having undergone said heat treatment at temperatures between 350 and 500 degrees C.
4 more elements
A thin film transistor for a liquid crystal display device, comprising:
- a substrate for the liquid crystal display device;
- a heat treated gate electrode made of copper alloy on an upper surface of said substrate said heat treatment having been performed at temperatures between 350 and 500 degrees C., said gate electrode including a y (atomic %) concentration of magnesium, and said gate electrode having a thickness t (Å), wherein the concentration y (atomic %) of magnesium in relation to the thickness (Å) is
- y≦94/t,
- said gate electrode being substantially free of migrations and hillocks despite having undergone said heat treatment at temperatures between 350 and 500 degrees C.;
- a gate insulating layer made of magnesium oxide on the upper surface of said gate electrode;
- an active layer on the gate insulating layer;
- an ohmic contact layer on the active layer;
- and
- source and drain electrodes on the ohmic contact layer.
6 more elements
Dependencies are inferred from the claim text.