Semiconductor device

#1. Field of the Invention

#The present invention relates to a semiconductor device, and more particularly, to a semiconductor device having an electrode formed on a semiconductor substrate provided with a semiconductor integrated circuit and electrically connected to the semiconductor integrated circuit, an organic insulating film formed on the semiconductor substrate and having an opening through which the electrode is exposed, and a bump electrode formed on the electrode via a bump underlying metal film.

#2. Background Art

#Other and further objects, features and advantages of the invention will appear more fully from the following description.

#FIG. 1(a) is a sectional view of a semiconductor device according to a first embodiment.

#FIG. 1(b) is a sectional view of a semi conductor device according to a first embodiment.

#The embodiments of the invention will be described in detail with reference to the accompanying drawings.

#First Embodiment

#Referring now to FIG. 1, the electroless plating step according to this embodiment will be described. After forming a plurality of electrodes 2 on a semiconductor substrate 1, on which semiconductor integrated circuits such as various types of transistors, wirings and the like are formed, an insulating film 4 having an opening 3 through which the electrode 2 is exposed, thereby providing a structure of FIG. 1(a). For the insulating film, an organic insulating film made of an organic material, such as a polyimide, is used.