Gunn diode and method of manufacturing the same
AssigneeNew Japan Radio Co., Ltd.
InventorsChikao Kimura, Atsushi Nakagawa
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Abstract
Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided. In a Gunn diode of the present invention, contact layers are interposing an active layer. An anode electrode and a cathode electrode are formed on the uppermost contact layer. A high resistance region around the cathode electrode is formed at least in an uppermost contact layer by ion implantation using the cathode and anode electrode as a mask. A region under the cathode electrode functions as a Gunn diode and a region under the anode electrode function as a conductive path from the anode electrode to the active layer. These two regions are defined by the high resistance region.
Claims13
A Gunn diode, in which a first semiconductor layer of heavily doped n-type InP, an active layer of lightly doped n-type InP and a second semiconductor layer of heavily doped n-type InGaAs are formed on a semiconductor substrate of heavily doped n-type InP in said order, further comprising:
- a first electrode of smaller area and a second electrode of larger area both formed on the second semiconductor layer to apply voltages to the active layer,
- and a high resistance region formed at least deeply to the lower surface of the second semiconductor layer by ion implantation and separating a region covered with the first electrode from the other in the second semiconductor layer, so as to let regions under the first electrode in the second semiconductor layer and the active layer work as a Gunn diode.
A Gunn diode, in which a first semiconductor layer of heavily doped n-type InP, an active layer of lightly doped n-type InP, a second semiconductor layer of heavily doped n-type InP and a third semiconductor layer of heavily doped InGaAs are formed on a semiconductor substrate of heavily doped n-type InP in said order, further comprising:
- a first electrode of smaller area and a second electrode of larger area both formed on the third semiconductor layer to apply voltages to the active layer,
- and a high resistance region formed at least deeply to the lower surface of the second semiconductor layer by ion implantation and separating regions covered with the first electrode from the others in the third and second semiconductor layer, so as to let regions under the first electrode in the second semiconductor layer and the active layer work as a Gunn diode.
A Gunn diode, in which a first semiconductor layer of heavily doped n-type InGaAs, an active layer of lightly doped n-type InP, a second semiconductor layer of heavily doped n-type InP and a third semiconductor layer of heavily doped InGaAs are formed on a semiconductor substrate of heavily doped n-type InP in said order, further comprising:
- a first electrode of smaller area and a second electrode of larger area both formed on the third semiconductor layer to apply voltages to the active layer,
- and a high resistance region formed at least deeply to the lower surface of the second semiconductor layer by ion implantation and separating regions covered with the first electrode from the others in the third and second semiconductor layer, so as to let regions under the first electrode in the first semiconductor layer and the active layer work as a Gunn diode.
A Gunn diode, in which a first semiconductor layer of heavily doped n-type InGaAs, an active layer of lightly doped n-type InP and a second semiconductor layer of heavily doped n-type InP are formed on a semiconductor substrate of heavily doped n-type InP in said order, further comprising:
- a first electrode of smaller area and a second electrode of larger area both formed on the second semiconductor layer to apply voltages to the active layer,
- and a high resistance region formed at least deeply to the lower surface of the second semiconductor layer by ion implantation and separating a region covered with the first electrode from the other in the second semiconductor layer, so as to let regions under the first electrode in the first semiconductor layer and the active layer work as a Gunn diode.
A Gunn diode, in which a first semiconductor layer of heavily doped n-type GaAs, an active layer of lightly doped n-type GaAs and a second semiconductor layer of heavily doped n-type GaAs are formed on a semiconductor substrate of heavily doped n-type GaAs in said order, further comprising:
- a first electrode of smaller area and a second electrode of larger area both formed on the second semiconductor layer to apply voltages to the active layer,
- and a high resistance region formed at least deeply to the lower surface of the second semiconductor layer by ion implantation and separating a region covered with the first electrode from the other in the second semiconductor layer, so as to let regions under the first electrode in the second semiconductor layer and the active layer work as a Gunn diode.
A Gunn diode, in which a first semiconductor layer of heavily doped n-type InP, an active layer of lightly doped n-type InP and a second semiconductor layer of heavily doped n-type InP are formed on a semiconductor substrate of heavily doped n-type InP in said order, further comprising:
- a first electrode of smaller area and a second electrode of larger area both formed on the second semiconductor layer to apply voltages to the active layer,
- and a high resistance region formed at least deeply to the lower surface of the second semiconductor layer by ion implantation and separating a region covered with the first electrode from the other in the second semiconductor layer, so as to let regions under the first electrode in the second semiconductor layer and the active layer work as a Gunn diode.
Dependencies are inferred from the claim text.