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US 6,686,646 B2Granted
Diverse band gap energy level semiconductor device
AssigneeMatrix Semiconductor, Inc.
InventorThomas H. Lee
Life of this patent
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Abstract
Hetero-structure semiconductor devices having first and second-type semiconductor junctions are disclosed. The hetero-structures are incorporated into pillar and rail-stack memory circuits improving the forward-to-reverse current ratios thereof.
Claims15
A memory element comprising:
- an insulating layer capable of being selectively breached by passing a current therethrough;
- and
- a first semiconductor layer in electrical communication with the insulating layer having a first band gap energy level, and
- a second semiconductor layer adjacent the first semiconductor layer and having a second band gap energy level, wherein the second band gap energy level is different from the first band gap energy level.
1 more element
Dependencies are inferred from the claim text.