High performance MEMS device fabricatable with high yield

A micro-electro-mechanical system (MEMS) device, comprising:

• a silicon supporting substrate layer;
• a silicon oxide electrically insulating layer disposed on said silicon supporting substrate layer;
• a stationary actuator comb disposed in a first silicon device layer on said silicon oxide electrically insulating layer;
• a first electrical contact to said stationary actuator comb;
• at least one first silicon bond pad disposed in the first silicon device layer on said silicon oxide electrically insulating layer;
• a moveable structure, including a functional device element and a moveable actuator comb, in a second silicon device layer vertically about said first device layer;
• at least one second silicon bond pad in the second silicon device layer;
• a silicon spring in the second silicon device layer connecting said moveable structure to at least one second silicon bond pad;
• at least one metal bond whereby said first silicon bond pad and said second silicon bond pad are bonded together;
• and
• a second electrical contact to said moveable structure,
• such that a voltage applied between said first and second electrical contacts tends to cause the functional device element to move relative to said supporting substrate layer.

A micro-electro-mechanical system (MEMS) device, comprising:

• a silicon supporting substrate layer;
• a silicon oxide electrically insulating layer disposed on said silicon supporting substrate layer;
• a stationary actuator comb disposed in a first silicon device layer on said silicon oxide electrically insulating layer;
• a first electrical contact to said stationary actuator comb;
• at least one first silicon bond pad disposed in the first silicon device layer on said silicon oxide electrically insulating layer;
• a moveable structure, including a functional device element and a moveable actuator comb, in a second silicon device layer vertically about said first device layer;
• at least one second silicon bond pad in the second silicon device layer;
• a silicon torsion spring in the second silicon device layer connecting said moveable structure to at least one second silicon bond pad;
• at least one thermal compression gold bond whereby said first silicon bond pad and said second silicon bond pad are bonded together;
• and
• a second electrical contact to said moveable structure,
• such that a voltage applied between said first and second electrical contacts tends to cause the functional device element to move relative to said supporting substrate layer.