Source-down power transistor

A source-down power transistor, comprising:

• a semiconductor body having a first surface and a second surface located opposite said first surface, said semiconductor body including a semiconductor substrate and at least one semiconductor layer located on said substrate, said substrate being of a first conduction type and said at least one semiconductor layer being of a second conduction type, said first surface located opposite said substrate;
• a first highly-doped region of said first conduction type located between said first surface and said semiconductor substrate, said first region extending to said substrate, said first region together with said substrate forming a source zone;
• a second highly-doped region of said first conduction type located in said at least one semiconductor layer at a non-zero distance away from said first region, said second region forming a drain zone extending from said first surface to a non-zero distance away from said substrate;
• a plurality of narrow trenches extending between said first region and said second region, each one of said plurality of said trenches having a longitudinal dimension extending between said first region and said second region in a longitudinal direction, and each one of said plurality of said trenches being lined with an insulating layer and being filled with a conductive material forming a gate electrode;
• and
• a source electrode located on said second surface of said semiconductor body.