Semiconductor switching element with integrated Schottky diode and process for producing the switching element and diode

A process for producing a semiconductor switching element which comprises:

• providing a semiconductor body having a front side and having a first connection zone of a first conduction type and a second connection zone of the first conduction type, and configuring the first connection zone and the second connection zone one on top of the other;
• providing the semiconductor body with a body zone of a second conduction type located between the first connection zone and the second connection zone;
• producing at least one control electrode insulated from the semiconductor body and located alongside the body zone on the front side of the semiconductor body;
• producing the control electrode causing the first connection zone being at least partially exposed and defining exposed regions of the first connection zone on the front side of the semiconductor body;
• producing a contact hole with a bottom and side walls in the semiconductor body, the contact hole passing from the front side of the semiconductor body through the first connection zone and through the body zone and reaching into the second connection zone;
• producing a Schottky barrier in the second connection zone in the contact hole;
• applying an insulation layer on the side walls of the contact hole;
• and
• producing a first connection electrode electrically bonding Schottky barrier and the exposed regions of the first connection zone.