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US 6,686,611 B2Granted
Nitride semiconductor and a method thereof, a nitride semiconductor device and a method thereof
AssigneeSony Corporation
InventorsHiroyuki Okuyama, Hiroshi Nakajima, Fumihiko Nakamura
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Abstract
In a nitride semiconductor of BpAlqGarInsN (0≦p≦1, 0≦q≦1, 0≦r≦1, 0≦s≦1, p+q+r+s=1), in particular a p-type nitride compound semiconductor, a point defect concentration of the p-type semiconductors is set to 1×1019 cm−3 or more. This makes it possible to obtain a high carrier concentration at room temperature.
Claims4
A nitride semiconductor of p-type BpAlqGarInsN (0≦p≦1;
- 0≦q ≦1;
- 0≦r≦1;0≦s≦1;
- p+q+r+s=1) doped with Mg, having a point defect concentration of 1×1019 cm−3 or more, thereby making it a possible to obtain a high carrier concentration;
- the doped p-type semiconductor is disposed over an undoped layer;
- and
- the undoped layer is disposed over a buffer layer.
3 more elements
A nitride semiconductor luminescence device comprising nitride semiconductor layers made of p-type BpAlqGarInsN (0≦p≦1;
- 0≦q ≦1;
- 0≦r≦1;0≦s≦1;
- p+q+r+s=1), wherein at least one of the p-type nitride semiconductor layers has a point defect concentration of 1×1019 cm−3 or more, thereby making it a possible to obtain a high carrier concentration.
Dependencies are inferred from the claim text.