Light emitting diode
AssigneeSouth Epitaxy Corporation
InventorJinn-Kong Sheu
Life of this patent
Estimating the term…
Abstract
A light emitting diode structure is formed on a substrate. A nucleation layer at low temperature is formed on the substrate. A buffer layer is formed on the nucleation layer for easing the subsequent formation of crystal growth. N active layer is disposed between an upper confinement layer and a lower confinement layer. The active layer include the semiconductor material doped with III-N elements. A contact layer is disposed on the upper confinement layer. A reversed tunneling layer is form on the contact layer, wherein the conductive types for both are different. A transparent layer is formed on the reversed tunneling layer. A cathode electrode contacts with the conductive buffer layer and is separated from the active layer and the transparent electrode.
Claims18
A structure for a light emitting diode, comprising:
- a substrate;
- a nucleation layer disposed over the substrate;
- a conductive buffer layer disposed over the nucleation layer;
- a first confinement layer disposed over the conductive buffer layer, wherein a conductive type of the first confinement layer is the same as a conductive type of the conductive buffer layer;
- an active layer disposed over the first confinement layer, wherein the active layer includes a semiconductor material from III-N elements;
- a second confinement layer disposed over the active layer, wherein a conductive type of the second confinement layer is different from the conductive type of the first confinement layer;
- a contact layer disposed over the second confinement layer, wherein a conductive type of the contact layer is the same as the conductive type of the second confinement layer;
- a reversed tunneling layer disposed over the contact layer, wherein a conductive type of the reversed tunneling layer is different from the conductive type of the contact layer;
- a transparent electrode disposed over the reversed tunneling layer;
- an anode disposed over the transparent electrode;
- and
- a cathode having contact with the conductive buffer layer, and separated from the first and the second confinement layers, the active layer, the contact layer and the transparent electrode.
A light emitting diode structure, comprising:
- a substrate;
- a conductive buffer layer disposed over the substrate;
- an active structured layer disposed over the substrate, the active structured layer comprising a semiconductor material from III-N elements;
- a contact layer disposed over the active structured layer;
- a reversed tunneling layer disposed over the contact layer, wherein a conductive type of the reversed tunneling layer is different from a conductive type of the contact layer;
- a transparent electrode disposed over the reversed tunneling layer;
- and
- a cathode having contact with the conductive buffer layer, and isolated from the active structured layer and the transparent electrode.
Dependencies are inferred from the claim text.