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US 6,686,608 B1Granted
Nitride semiconductor light emitting device
AssigneeSharp Kabushiki Kaisha
InventorYoshiyuki Takahira
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Abstract
A nitride semiconductor light emitting device of the present invention includes; a GaN substrate into which a group VII element is doped; an intermediate layer section provided on the GaN substrate; and a light emitting layer provided on the intermediate layer section. The intermediate layer section has a sufficient thickness to prevent the group VII element diffused from the GaN substrate from being detected in the light emitting layer.
Claims34
A nitride semiconductor light emitting device, comprising:
- a GaN substrate into which a group VII element is doped;
- an intermediate layer section provided on the GaN substrate;
- and
- a light emitting layer provided on the intermediate layer section, wherein
- the intermediate layer section has a sufficient thickness to prevent the group VII element diffused from the GaN substrate from being detected in the light emitting layer,
- wherein the intermediate layer section comprises a plurality of layers including an n-GaN base layer, an n-AlGaN cladding layer and an n-InGaN guide layer, which are arranged in this order from the GaN substrate side,
- wherein said intermediate layer includes a material selected from the group consisting of Si, Se, S, Sn, Te, Ge and Mg, and
- wherein the GaN substrate is in contact with an ohmic electrode.
5 more elements
A nitride semiconductor light emitting device comprising:
- a GaN substrate into which a group VII element is doped;
- an intermediate layer section provided on the GaN substrate;
- and
- a light emitting layer provided on the intermediate layer section,
- wherein the intermediate layer section has a sufficient thickness to prevent the group VII element diffused from the GaN substrate from being detected in the light emitting layer, and
- wherein the nitride semiconductor light emitting device is a semiconductor laser device;
- the intermediate layer section comprises a plurality of layers including an n-InGaN base layer, an n-AlGaN cladding layer and an n-InGaN guide layer, which are arranged in this order from the GaN substrate side;
- and
- the intermediate layer section has a total thickness equal to or greater than about 0.5 μm.
6 more elements
A nitride semiconductor light emitting device comprising:
- a GaN substrate into which a group VII element is doped;
- an intermediate layer section provided on the GaN substrate;
- and
- a light emitting layer provided on the intermediate layer section,
- wherein the intermediate layer section has a sufficient thickness to prevent the group VII element diffused from the GaN substrate from being detected in the light emitting layer;
- and
- wherein the nitride semiconductor light emitting device is a semiconductor laser device;
- the intermediate layer section comprises a plurality of layers including an n-InGaN base layer, an n-AlGaInN cladding layer and an n-InGaN guide layer, which are arranged in this order from the GaN substrate side;
- and
- the intermediate layer section has a total thickness equal to or greater than about 0.5 μm.
7 more elements
A nitride semiconductor light emitting device, comprising:
- a GaN substrate into which a group VII element is doped;
- an intermediate layer section provided on the GaN substrate;
- and
- a light emitting layer provided on the intermediate layer section, wherein
- the intermediate layer section has a sufficient thickness to prevent the group VII element diffused from the GaN substrate from being detected in the light emitting layer;
- wherein the intermediate layer section comprises a plurality of layers including an n-GaN base layer, an n-AlGaN cladding layer and an n-InGaN guide layer, which are arranged in this order from the GaN substrate side,
- wherein said intermediate layer is produced through a MOCVD method and
- wherein the GaN substrate is in contact with an ohmic electrode.
5 more elements
A nitride semiconductor light emitting device, comprising:
- a GaN substrate into which a group VII element is doped;
- an intermediate layer section provided on the GaN substrate;
- and
- a light emitting layer provided on the intermediate layer section, wherein
- the intermediate layer section has a sufficient thickness to prevent the group VII element diffused from the GaN substrate from being detected in the light emitting layer,
- wherein the intermediate layer section comprises a plurality of layers including an n-GaN base layer, an n-AlGaN cladding layer and an n-InGaN guide layer, which are arranged in this order from the GaN substrate side,
- wherein said light emitting device comprises two electrodes respectively provided on the outermost layers of the layered structure and
- wherein the GaN substrate is in contact with one of said electrodes.
5 more elements
A nitride semiconductor light emitting device, comprising:
- a GaN substrate into which a group VII element is doped;
- an intermediate layer section provided on the GaN substrate;
- and
- a light emitting layer provided on the intermediate layer section, wherein
- the intermediate layer section comprises a plurality of layers including an n-GaN base layer, an n-AlGaN cladding layer and an n-InGaN guide layer, which are arranged in this order from the GaN substrate side,
- the intermediate layer section has a sufficient thickness to prevent the group VII element diffused from the GaN substrate from being detected in the light emitting layer;
- and
- wherein a thickness of said intermediate layer is equal to or more than 0.1 μm and
- wherein the GaN substrate is in contact with an ohmic electrode.
6 more elements
Dependencies are inferred from the claim text.