Structure and method for mounting a semiconductor element

Abstract

A semiconductor element 4 is fixed with an indium film 3 that is formed on an electrode 2 by plating. This permits precise control of the amount of indium applied to the electrode and thus secure fixing of the semiconductor element 4 on the electrode 2. To minimize loss in the light emission efficiency of the semiconductor element 4 and variations of the hue of the light it emits, the indium film 3 has a thickness preferably in the range from 5 to 10 μm. Using a ZnSe-based light-emitting element as the semiconductor element 4 is more effective. To ensure secure and economical fixing of the semiconductor element 4 on the electrode 2 with the indium film 3, the indium film 3 formed on the electrode has an area preferably in the range from 1.1 to 1.5 times the area of the surface over which the semiconductor element 4 is fixed.

Dependencies are inferred from the claim text.