Semiconductor device, display device, and method of manufacturing the same

A semiconductor device comprising:

• a thin film transistor over a substrate;
• a capacitor element over the substrate;
• an insulating film covering the thin film transistor and the capacitor element;
• a first metal wiring on the insulating film, wherein the first metal wiring is electrically connected to the thin film transistor;
• a second metal wiring on the insulating film, wherein the second metal wiring is electrically connected to the capacitor element;
• a pixel electrode over the insulating film, wherein the pixel electrode is electrically connected to the first metal wiring and the second metal wiring;
• and
• a resin film between the insulating film and the pixel electrode for alleviating step differences between an edge of the first metal wiring and the insulating film and between an edge of the second metal wiring and the insulating film.

A semiconductor device comprising:

• a thin film transistor over a substrate;
• a first insulating film covering the thin film transistor;
• a metal wiring on the first insulating film, wherein the metal wiring is electrically connected to the thin film transistor;
• a pixel electrode over the first insulating film, wherein the pixel electrode is electrically connected to the metal wiring;
• and
• a second insulating film in contact with a sidewall portion of the metal wiring, wherein the second insulating film is interposed between the pixel electrode and the first insulating film, and has a curved surface at the sidewall portion of the metal wiring.

A semiconductor device comprising:

• a thin film transistor over a substrate;
• a capacitor element over the substrate;
• a first insulating film covering the thin film transistor and the capacitor element;
• a first metal wiring on the first insulating film, wherein the first metal wiring is electrically connected to the thin film transistor;
• a second metal wiring on the first insulating film, wherein the second metal wiring is electrically connected to the capacitor element;
• a pixel electrode over the first insulating film, wherein the pixel electrode is electrically connected to the first metal wiring and the second metal wiring;
• and
• a second insulating film in contact with sidewall portions of the first metal wiring and the second metal wiring, wherein the second insulating film is interposed between the first insulating film and the pixel electrode, and has curved surfaces at the sidewall portions of the first metal wiring and the second metal wiring.

A light emitting device comprising:

• a thin film transistor over a substrate;
• an insulating film covering the thin film transistor;
• a metal wiring-on the insulating film, wherein the metal wiring is electrically connected to the thin film transistor;
• a pixel electrode over the insulating film, the pixel electrode is electrically connected to the metal wiring;
• and
• a resin film between the insulating film and the pixel electrode for alleviating a step difference between an edge of the metal wiring and the insulating film.

A light emitting device comprising:

• a thin film transistor over a substrate;
• a capacitor element over the substrate;
• an insulating film covering the thin film transistor and the capacitor element;
• a first metal wiring on the insulating film, wherein the first metal wiring is electrically connected to the thin film transistor;
• a second metal wiring on the insulating film, wherein the second metal wiring is electrically connected to the capacitor element;
• a pixel electrode over the insulating film, wherein the pixel electrode is electrically connected to the first metal wiring and the second metal wiring;
• and
• a resin film between the insulating film and the pixel electrode for alleviating step differences between an edge of the first metal wiring and the insulating film and between an edge of the second metal wiring and the insulating film.

A light emitting device comprising:

• a thin film transistor over a substrate;
• a first insulating film covering the thin film transistor;
• a metal wiring on the first insulating film, wherein the metal wiring is electrically connected to the thin film transistor;
• a pixel electrode over the first insulating film, wherein the pixel electrode is electrically connected to the metal wiring;
• and
• a second insulating film in contact with a sidewall portion of the metal wiring, wherein the second insulating film is interposed between the pixel electrode and the first insulating film, and has a curved surface at the sidewall portion of the metal wiring.

A light emitting device comprising:

• a thin film transistor over a substrate;
• a capacitor element over the substrate;
• a first insulating film covering the thin film transistor and the capacitor element;
• a first metal wiring on the first insulating film, wherein the first metal wiring is electrically connected to the thin film transistor;
• a second metal wiring on the first insulating film, wherein the second metal wiring is electrically connected to the capacitor element;
• a pixel electrode over the first insulating film, wherein the pixel electrode is electrically connected to the first metal wiring and the second metal wiring;
• and
• a second insulating film in contact with sidewall portions of the first metal wiring and the second metal wiring, wherein the second insulating film is interposed between the first insulating film and the pixel electrode, and has curved surfaces at the sidewall portions of the first metal wiring and the second metal wiring.