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US 6,686,558 B2Granted
Atmospheric pressure inductive plasma apparatus
AssigneeTimeDomain CVD, Inc.
InventorSimon I. Selitser
Life of this patent
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Abstract
An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.
Claims9
An apparatus comprising:
- an inductively coupled plasma generator arranged to generate a plasma in quasi-thermal or thermal equilibrium, said generator further having an opening configured to direct said plasma extending in an axial direction, said generator formed to shape said extending plasma with a transverse cross-section characterized by a length and width perpendicular to said axial direction,
- wherein said length is greater than said width.
A plasma generating apparatus, comprising:
- a linear inductive thermal plasma torch including one or more gas conducting tubes having a transverse width and transverse length;
- and
- a coil surrounding said one or more gas conducting tubes for generating a plasma from one or more gases that pass through said one or more tubes,
- wherein said length of at least one of said tubes is substantially greater than the width.
1 more element
Dependencies are inferred from the claim text.