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AssigneesSharp Kabushiki Kaisha, Mitsubishi Gas Chemical Company, Inc.
InventorsMasahiro Nohara, Ryou Hashimoto, Taimi Oketani, Hisaki Abe, Taketo Maruyama, Tetsuo Aoyama
Estimating the term…
A cleaning agent which comprises 0.1 to 60% by weight of an oxidizing agent and 0.0001 to 5% by weight of a chelating agent. In the process for producing semiconductor integrated circuits, a pattern layer of a photoresist used as an etching mask and residues formed from the photoresist by dry etching can be easily removed with the cleaning agent. In the process for producing substrates for liquid crystal display panels, residues derived from a conductive thin film formed by dry etching can also be easily removed. In the cleaning processes using the cleaning agent, wiring materials or insulating materials in thin film circuit devices or other materials used for producing substrates of semiconductor integrated circuits and liquid crystal panels are not corroded.
A cleaning agent which consists essentially of 3 to 10% by weight of hydrogen peroxide and 0.2 to 1.5% by weight of a chelating agent, and which is a cleaning agent that removes photoresist film, resist residues and residues derived from conductive thin films, and cleans glass substrates of liquid crystal display panels, wherein said chelating agent is at least one compound selected from the group consisting of ethylenediaminetetrakismethylenephosphonic acid, diethylenetriaminepentamethylenephosphonic acid, 1,2-propanediaminetetramethylenephosphonic acid and ethylenediaminetetraacetic acid.
Dependencies are inferred from the claim text.