Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
AssigneeMicron Technology, Inc.
InventorsKevin L. Beaman, John T. Moore
Life of this patent
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Abstract
The invention includes a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nitrogen within the silicon dioxide is at least 10 Å above the substrate. After the nitrogen is formed within the silicon dioxide layer, conductively doped silicon is formed on the silicon dioxide layer.
Claims31
A method of forming a structure over a semiconductor substrate, comprising:
- forming a silicon dioxide containing layer across at least some of the substrate;
- after forming the silicon dioxide of the silicon dioxide containing layer, providing nitrogen within the silicon dioxide of the silicon dioxide containing layer, substantially all of the nitrogen within the silicon dioxide being at least 10 Å above the substrate;
- and
- after providing the nitrogen within the silicon dioxide containing layer, forming conductively doped silicon on the silicon dioxide layer.
A method of forming structures over a semiconductor substrate, comprising:
- forming a first oxide region which covers only a portion of the substrate;
- providing nitrogen within the first oxide region, substantially all of the nitrogen within the first oxide region being at least 10 Å above the substrate;
- forming a second oxide region over at least some of the substrate which is not covered by the first oxide region;
- forming a first conductively-doped silicon material over the first oxide region and a second conductively-doped silicon material over the second oxide region;
- one of the first and second conductively-doped silicon materials being n-type doped and the other being p-type doped.
A method of forming a pair of transistors associated with a semiconductor substrate, comprising:
- defining a first region and a second region of the substrate;
- forming a first oxide region which covers at least some of the first region of the substrate and which does not cover the second region of the substrate;
- providing nitrogen within the first oxide region;
- after providing the nitrogen within the first oxide region, forming a first conductive layer over the first oxide region and which does not cover the second region of the substrate;
- after forming the first conductive layer, forming a second oxide region over the second region of the substrate;
- forming a second conductive layer over the second oxide region;
- patterning the first conductive layer into a first transistor gate;
- patterning the second conductive layer into a second transistor gate;
- forming first source/drain regions proximate the first transistor gate and gatedly connected to one another by the first transistor gate;
- and
- forming second source/drain regions proximate the second transistor gate and gatedly connected to one another by the second transistor gate.
Dependencies are inferred from the claim text.