Semiconductor device manufacturing method and apparatus
AssigneeKabushiki Kaisha Toshiba
InventorTakayoshi Dohi
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Abstract
In patterning a silicon-containing thin film formed over an insulating substrate by means of vapor-phase chemical etching using a resist pattern formed on the thin film as a mask, a luminescence intensity A of wavelengths in a predetermined wavelength range and a luminescence intensity B at a specific wavelength are detected during the patterning. The luminescence intensity B is divided by the luminescence intensity A to produce a divide signal (B/A). The time of termination of the patterning is determined based on a change of the divide signal.
Claims19
A method of manufacturing a semiconductor device comprising:
- forming a first thin film, formed of non-single crystalline silicon, over an insulating substrate;
- forming a first resist pattern on the first thin film;
- patterning the first thin film by means of vapor phase chemical etching using the first resist pattern as a mask;
- forming a second thin film, formed of non-single crystalline silicon which is different from the first thin film, on the patterned first thin film;
- forming a second resist pattern on the second thin film;
- and
- patterning the second thin film by means of vapor-phase chemical etching using the second resist pattern as a mask;
- the patterning of the first thin film including detecting a luminescence intensity at a specific wavelength emitted from molecules or atoms which are contained mainly in the first and second thin films during the patterning, and determining the time of termination of the patterning on the basis of a change in the detected luminescence intensity, and
- the patterning of the second thin film including detecting a luminescence intensity at the specific wavelength during the patterning, and determining the time of termination of the patterning on the basis of a change in the detected luminescence intensity.
A method of manufacturing a semiconductor device comprising:
- forming a thin film, formed from non-single crystalline silicon, over an insulating substrate;
- forming a resist pattern on the thin film;
- and
- patterning the thin film by means of vapor-phase chemical etching using the resist pattern as a mask;
- and
- after the termination of the patterning, ashing the resist pattern to remove it in continuous with the patterning in a common processing apparatus,
- the patterning including detecting a luminescence intensity at specific wavelengths emitted from molecules or atoms which are contained mainly in the thin film during the patterning, and determining the time of termination of the patterning on the basis of a change in the detected luminescence intensity, and
- the ashing including detecting a luminescence intensity at the specific wavelengths during the ashing, and determining the time of termination of the ashing on the basis of a change in the detected luminescence intensity.
Dependencies are inferred from the claim text.