Method for forming a plug metal layer
AssigneeUnited Microelectronics Corp.
InventorsYu-Piao Wang, Chia-Che Chuang
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Abstract
A method for forming a plug metal layer is disclosed and includes the following steps. Performance of an atomic layer deposition (ALD) at least once to form a continuous metal seed layer (CMSL) on a barrier layer, wherein the atomic layer deposition comprise: a mixing gas of hydrogen and silane, such as hydroxy silane or tetrahydroxy silane, being transported on the barrier layer. Next, performance of a purge/vacuum process. Then transporting a reactive gas, such as WF6, to form the continuous metal seed layer (CMSL). A subsequent cycle step of atomic layer deposition (ALD) can be repeated to form the thickness of the continuous metal seed layer (CMSL) to about 20 to 40 Å.
Claims8
A method for forming a plug tungsten layer, the method comprising:
- providing a semiconductor substrate with a dielectric layer, wherein said dielectric layer has a via hole therein;
- conforming a titanium layer on said dielectric layer and the sidewall and the bottom of said via hole;
- forming a nitride titanium layer on said titanium layer, wherein said titanium layer and said nitride titanium layer stack to form a barrier layer;
- treating said barrier layer by way of using a plasma process;
- transporting a mixing gas having a hydrogen and a silane on said barrier layer to adsorb said mixing gas on said barrier layer;
- performing a purge/vacuum process to remove remainder after absorption;
- transporting a reactive gas with a tungsten on said barrier layer with said mixing gas to carry out a substitution reaction of said mixing and said reactive gas, so as to form a continuous tungsten seed layer on said barrier layer;
- forming a tungsten layer on said continuous tungsten seed layer;
- and
- forming said plug tungsten layer in said via hole.
Dependencies are inferred from the claim text.