US 6,686,269 B2 · Semiconductor device having improved contact hole structure, and method of manufacturing the same

Abstract

Within an interlayer dielectric film laid on a semiconductor substrate, a first conducting line is formed at a position lower than a second conducting line. Further, an etching stopper film, which has an etch selectivity differing from that of the interlayer dielectric films under a certain set of etching conditions, is formed at an intermediate position between the first conducting line and the second conducting line. A contact hole to reach the upper second conducting line is formed by etching under the condition that the interlayer dielectric film has a high etch selectivity with respect to the etching stopper film. The depth of a contact hole is controlled not to reach the lower first conducting line in the event the contact hole is offset from a upper conducting line.

Claims9

Dependent claims

A method of manufacturing a semiconductor device comprising the steps of:

forming a first lower interconnection and a second higher interconnection in an interlayer dielectric film laid on a semiconductor substrate, and, at an intermediate position between the first lower interconnection and the second higher interconnection, an etch stopper film whose etch selectivity differs from that of the interlayer dielectric film at a predetermined etching operation;
and
forming an opening in the interlayer dielectric film so as to extend from the surface of the interlayer dielectric film to the second interconnection, to extend to a position before the etch stopper film after having passed the second interconnection, or to extend to the etch stopper film.

A method of manufacturing a semiconductor device comprising:

a step of forming a first lower interconnection and a second higher interconnection in an interlayer dielectric film laid on a semiconductor substrate, and, at an intermediate position between the first and second higher interconnections a first etch stopper film whose etch selectivity differs from that of the interlayer dielectric film for a predetermined etching operation, and, at a position higher than the second higher interconnection, a second etch stopper film whose etch selectivity differs from that of the interlayer dielectric film for a predetermined etching operation;
a first opening step of forming opening in the interlayer dielectric film so as to extend from the surface of the interlayer dielectric film to the second etch stopper film;
a second opening step of etching the second etch stopper film by way of the thus-opened opening;
and
a third opening step of forming an opening so as to extend from the opening and reach the second interconnection by penetrating through the second etch stopper film, to extend further by passing through the position of the second interconnection, and to extend further to the first etch stopper film.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor device having improved contact hole structure, and method of manufacturing the same

Life of this patent

Semiconductor device having improved contact hole structure, and method of manufacturing the same

Life of this patent

Abstract

Claims9