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US 6,686,264 B2Granted
Methods of forming binary noncrystalline oxide analogs of silicon dioxide
AssigneeNorth Carolina State University
InventorGerald Lucovsky
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Abstract
A non-crystalline oxide is represented by the formula: ABO4 wherein A is an element selected from Group IIIA of the periodic table; and B is an element selected from Group VB of the periodic table.
Claims19
A method of forming a non-crystalline oxide represented by the formula:
- ABO4
- wherein A is an element selected from Group IIIA of the periodic table and B is an element selected from Group VB of the periodic table, said method comprising:
- delivering a gaseous source comprising element A, a gaseous source comprising element B, and a gaseous source comprising oxygen on a substrate such that the gaseous source comprising element A, the gaseous source comprising element B, and the gaseous source comprising oxygen react to form the non-crystalline oxide.
Dependencies are inferred from the claim text.