Damascene gate process with sacrificial oxide in semiconductor devices
AssigneeAdvanced Micro Devices, Inc.
InventorsShibly S. Ahmed, Haihong Wang, Bin Yu
Life of this patent
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Abstract
A method of manufacturing a semiconductor device may include forming a fin structure on an insulator and forming a gate structure over a channel portion of the fin structure. The method may also include forming a sacrificial oxide layer around the gate structure and removing the gate structure to define a gate recess within the sacrificial oxide layer. A metal gate may be formed in the gate recess, and the sacrificial oxide layer may be removed.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a fin structure on an insulator;
- forming a gate structure over a portion of the fin structure;
- forming a sacrificial oxide layer around the gate structure;
- replacing the gate structure within the sacrificial oxide layer with a metal gate;
- and
- removing the sacrificial oxide layer.
A method of manufacturing a semiconductor device, comprising:
- forming a fin structure on an insulator;
- forming a gate structure over a channel portion of the fin structure;
- forming a sacrificial oxide layer around the gate structure;
- removing the gate structure to define a gate recess within the sacrificial oxide layer;
- forming a metal gate in the gate recess;
- and
- removing the sacrificial oxide layer.
A method of manufacturing a semiconductor device, comprising:
- forming a fin structure including a dielectric cap on an insulator;
- forming a gate structure over a channel portion of the fin structure;
- forming a sacrificial oxide layer around the gate structure;
- removing the gate structure to define a gate recess within the sacrificial oxide layer;
- removing the dielectric cap on the fin structure;
- forming a dielectric layer on the fin structure;
- forming a metal gate in the gate recess within the sacrificial oxide layer;
- and
- removing the sacrificial oxide layer.
Dependencies are inferred from the claim text.