Semiconducting devices and method of making thereof

Process for providing a layer for a semiconducting device including silicon, the process comprising the steps of:

• loading a substrate in a vacuum chamber maintained at a vessel pressure between 15 and 500 microbars with said vacuum chamber including filaments being heated in the vacuum chamber to a predetermined dissociation temperature in the range of between 500-3000° C.;
• providing a shutter in the vacuum chamber between said filaments and said substrate which is displaceable between an open condition and a closed condition;
• introducing hydrogen gas into the vacuum chamber for a first predetermined time with the shutter in its said open position removed between said filaments and said substrate exposing said filaments to said substrate so that said hydrogen gas dissociates into fractions;
• turning off the hydrogen gas and moving the shutter to its said closed position between said filaments and said substrate for a second predetermined time;
• introducing silane or a mixture of silane and hydrogen into the vacuum chamber for a third predetermined time at a silane gas flow rate of between 20 standard cm3/minute and 150 standard cm3/minute and moving the shutter to its said open position, so that the silane or mixture of silane and hydrogen dissociates into fractions when exposed to the filaments such that a semiconducting layer comprising silicon is deposited onto the substrate;
• and
• turning the filaments off and flowing silane through the vacuum chamber for a fourth predetermined time to cool the filaments down to ambient temperature.