Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHideomi Suzawa, Yoshihiro Kusuyama
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Abstract
It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a lamination film of different material and film thickness (inorganic insulating film and organic resin film) by conducting etching once. By setting the selective ratio of dry etching (etching rate of organic resin film 503/etching rate of inorganic insulating film 502 containing nitrogen) from 1.6 to 2.9, preferably 1.9, the shape and the size of the contact holes to be formed even in a film of different material and film thickness can be nearly the same in both of the contact holes.
Claims24
A method for forming a display device comprising:
- forming an inorganic insulating film over a source region and a drain region of a pixel transistor;
- forming an organic resin film over said inorganic insulating film;
- forming a contact hole in said inorganic insulating film and said organic resin film in one process by etching with a selective ratio of an etching rate of said inorganic insulating film to an etching rate of said organic resin film from 1.6 to 2.9;
- and
- forming a pixel electrode over said organic resin film, said pixel electrode connected with one of said source region and said drain region through said contact hole.
A method for forming a display device comprising:
- forming an inorganic insulating film over a source region and a drain region of a pixel transistor;
- forming an organic resin film over said inorganic insulating film;
- forming a tapered contact hole in said inorganic insulating film and said organic resin film in one process by etching with a selective ratio of an etching rate of said inorganic insulating film to an etching rate of said organic resin film from 1.6 to 2.9;
- and
- forming a pixel electrode over said organic resin film, said pixel electrode connected with one of said source region and said drain region through said contact hole.
A method for forming a display device comprising:
- forming a first interlayer insulating film over a semiconductor layer comprising a source region, a drain region and a channel region therein, said channel region provided between said source region and said drain region;
- forming a first contact hole in said first interlayer insulating film;
- forming a wiring over said first interlayer insulating film, said wiring connected with one of said source region and said drain region through said first contact hole;
- forming an inorganic insulating film over said wiring and said first interlayer insulating film;
- forming an organic resin film over said inorganic insulating film;
- forming a second contact hole in said inorganic insulating film and said organic resin film in one process by etching with a selective ratio of an etching rate of said inorganic insulating film to an etching rate of said organic resin film from 1.6 to 2.9;
- and
- forming a pixel electrode over said organic resin film, said pixel electrode connected with said wiring through said second contact hole.
Dependencies are inferred from the claim text.