Method of separating semiconductor dies from a wafer
AssigneeTexas Instruments Incorporated
InventorKurt P. Wachtler
Life of this patent
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Abstract
Methods are disclosed for manufacturing semiconductor device dies and for separating dies from a semiconductor wafer, wherein one or more channels are etched in the top of the wafer between individual die areas. Material is then removed from the bottom side of the wafer in order to separate the individual dies. Methods are also disclosed for removing material from the bottom side of the wafer dies, wherein a contoured surface is provided on the die bottom, such as through an etching process. In addition, methods are disclosed for removing material from the bottom side of a wafer, and for securing a semiconductor device to a surface. Semiconductor wafers and dies are also disclosed having contoured bottom surfaces.
Claims16
A method of separating dies from a wafer with top and bottom sides and having a plurality of electrical circuits in corresponding die areas of the wafer, the method comprising:
- etching channels in the wafer extending into the wafer from the top side toward the exposed bottom side, wherein the channels are located between the die areas of the wafer;
- mounting a carrier tape onto the top side of the die areas of the wafer;
- and
- removing material from the exposed bottom side of the wafer to expose the channels and separate the dies from one another,
- wherein removing material from the bottom side of the wafer comprises etching a contoured surface in the bottom side of the wafer,
- attaching said non contoured surface to a circuit board, leaving said contoured surface exposed.
A method of separating dies from a wafer with top and bottom sides and having a plurality of electrical circuits in corresponding die areas of the wafer, the method comprising:
- etching channels in the wafer extending into the wafer from the top side toward the exposed bottom side, wherein the channels are located between the die areas of the wafer;
- mounting a carrier tape onto the top side of the die areas of the wafer;
- and
- removing material from the exposed bottom side of the wafer to expose the channels and separate the dies from one another,
- wherein removing material from the bottom side of the wafer comprises at least one of grinding and etching;
- wherein etching a contoured surface comprises selectively etching the bottom side of the wafer to create the contoured surface;
- wherein selectively etching the bottom side of the wafer comprises:
- applying a pattern to the bottom side of the wafer using an etch resistant material;
- and
- selectively etching the bottom side pattern using a plasma to create the contoured surface;
- wherein applying a pattern to the bottom side of the wafer comprises jetting polymer droplets in a dot pattern on the bottom side of the wafer;
- and
- wherein the polymer droplets have an etch rate compatible with that of the wafer, and wherein selectively etching the bottom side pattern comprises performing a non-directional etch on the bottom side until the channels are exposed.
Dependencies are inferred from the claim text.