Method to deposit a stacked high-κ gate dielectric for CMOS applications
AssigneeSharp Laboratories of America, Inc.
InventorsJohn F. Conley, Jr., Yoshi Ono, Rajendra Solanki
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Abstract
A method of forming a layer of high-κ dielectric material in an integrated circuit includes preparing a silicon substrate; depositing a first layer of metal oxide using ALD with a metal nitrate precursor; depositing another layer of metal oxide using ALD with a metal chloride precursor; and completing the integrated circuit.
Claims16
A method of forming a layer of high-κ dielectric material in an integrated circuit comprising:
- preparing a silicon substrate, including forming an H-terminated surface on the silicon substrate;
- depositing a first layer of metal oxide using ALD with a metal nitrate precursor;
- depositing another layer of metal oxide using ALD with a metal chloride precursor;
- and
- completing the integrated circuit.
A method of forming a layer of high-κ dielectric gate oxide in an integrated circuit comprising:
- preparing a silicon substrate, including forming an H-terminated surface on the silicon substrate;
- depositing a first layer of metal oxide using from one to five ALD cycles with a metal nitrate precursor to achieve a desired metal oxide layer thickness;
- depositing another layer of metal oxide using multiple ALD cycles with a metal chloride precursor;
- and
- completing the integrated circuit.
A method of forming a layer of HfO2 high-κ dielectric gate oxide in an integrated circuit comprising:
- preparing a silicon substrate, including forming an H-terminated surface on the silicon substrate;
- depositing a first layer of HfO2 metal oxide using from one to five ALD cycles with a Hf(NO3)4 precursor to achieve a desired metal oxide layer thickness;
- depositing another layer of HfO2 using multiple ALD cycles with a HfCl4 precursor;
- and
- completing the integrated circuit.
Dependencies are inferred from the claim text.