Methods for controlling the crystallographic texture of thin films with anisotropic ferroelectric polarization or permittivity
AssigneeTexas Instruments Incorporated
InventorsStephen R. Gilbert, Theodore S. Moise, Scott R. Summerfelt
Life of this patent
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Abstract
A method for controlling the crystallographic texture of thin films with anisotropic ferroelectric polarization or permittivity by means of ion bombardment resulting in a texture with higher ferroelectric polarization or permittivity which is normally energetically disfavored.
Claims9
A method of forming dielectric layers, comprising the action of depositing a thin film of a dielectric material with an anisotropic ferroelectric polarization onto a surface from the vapor phase, while applying an RF bias to said surface diring a first portion of said depositing and removing said RF bias during a second portion of said depositing.
A method of forming dielectric layers, comprising the action of depositing a thin film of a dielectric material with an anisotropic permittivity onto a surface from the vapor phase, while applying an RF bias to said surface diring a first portion of said depositing and removing said RF bias during a second portion of said depositing.
A method of depositing a film of a dielectric material, comprising:
- (a) providing precursors, including metal organic compounds, in a chamber;
- (b) activating said precursors with a plasma;
- (c) reacting said activated precursors on a substrate in said chamber with an applied bias to form a first subfilm of a dielectric material;
- and
- (d) further reacting said activated precursors on said substrate after removal of said applied bias to form a second subfilm of said dielectric material on said first subfilm.
A method of depositing a film of a dielectric material, comprising:
- (a) providing precursors, including metal organic compounds, in a chamber;
- (b) thermally activating said precursors;
- (c) reacting said activated precursors on a substrate in said chamber with an said applied bias to form a first subfilm of a dielectric material;
- and
- (d) further reacting said activated precursors on said substrate after removal of said applied bias to form a second subfilm of said dielectric material on said first subfilm.
Dependencies are inferred from the claim text.