Fabrication method of semiconductor integrated circuit device
AssigneeRenesas Technology Corp.
InventorsOsamu Inoue, Norio Hasegawa, Shuji Ikeda
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Abstract
On the occasion of the aligning process to transfer a predetermined pattern to a semiconductor wafer by irradiating a photoresist on the semiconductor wafer with an aligning laser beam of the modified lighting via a photomask MK, the photomask MK allocating, to provide periodicity, the main apertures to transfer the predetermined pattern as the apertures formed by removing a part of the half-tone film on the mask substrate and the auxiliary apertures not resolved on the semiconductor wafer as the apertures formed by removing a part of the half-tone film is used to improve the resolution of the pattern.
Claims27
Method for manufacturing a semiconductor IC device, comprising the steps of:
- (a) depositing a photoresist over a semiconductor wafer so as to form a photoresist film;
- and
- (b) transferring an integrated circuit pattern over a photomask to the semiconductor wafer by irradiating the photoresist film over said semiconductor wafer with an off-axis illumination through an optical reduction projection system,
- wherein said photomask comprises:
- (i) a mask substrate;
- (ii) a halftone film over a main surface of the mask substrate;
- (iii) a plurality of main apertures in the halftone film to transfer the integrated circuit pattern corresponding to a plurality of hole patterns having substantially a same size over the wafer;
- and
- (iv) a plurality of auxiliary apertures in the halftone film not resolved over said semiconductor wafer,
- wherein said main apertures and said auxiliary apertures are disposed periodically as a whole.
Method for manufacturing a semiconductor IC device, comprising the steps of:
- (a) depositing a photoresist over a semiconductor wafer so as to form a photoresist film;
- and
- (b) transferring an integrated circuit pattern over a photomask to the semiconductor wafer by irradiating the photoresist film over said semiconductor wafer with an off-axis illumination through an optical reduction projection system,
- wherein said photomask comprises:
- (i) a mask substrate;
- (ii) a halftone film over a main surface of the mask substrate;
- (iii) a plurality of main apertures in the halftone film to transfer the integrated circuit pattern corresponding to a plurality of hole patterns having substantially a same size over the wafer;
- and
- (iv) a plurality of auxiliary apertures in the halftone film not resolved over said semiconductor wafer,
- wherein said main apertures and said auxiliary apertures are disposed periodically as a whole, and a proximity correction is applied to at least one of first main apertures of said main apertures and first auxiliary apertures of said auxiliary apertures.
Method for manufacturing a semiconductor IC device, comprising the steps of:
- (a) depositing a photoresist over a semiconductor wafer so as to form a photoresist film;
- and
- (b) transferring an integrated circuit pattern over a photomask to the semiconductor wafer by irradiating the photoresist film over said semiconductor wafer with an off-axis illumination through an optical reduction projection system,
- wherein said photomask comprises:
- (i) a mask substrate;
- (ii) a halftone film over a main surface of the mask substrate;
- (iii) a plurality of main apertures in the halftone film to transfer the integrated circuit pattern corresponding to a plurality of hole patterns having substantially a same size over the wafer;
- and
- (iv) a plurality of auxiliary apertures in the halftone film not resolved over semiconductor wafer,
- wherein said main apertures and said auxiliary apertures are disposed periodically as a whole;
- and said auxiliary apertures are disposed in a region which is broadened for a length of integer times a pitch of said integrated circuit pattern with reference to said main apertures.
Dependencies are inferred from the claim text.