Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
AssigneeEmcore Corporation
InventorsVadim Boguslavskiy, Alexander Gurary
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Abstract
A method of growing epitaxial layers on a wafer is provided and includes providing a wafer carrier having a surface for retaining the wafer; placing the wafer on the wafer-retaining surface of the wafer carrier while the wafer carrier is in a loading position separated from a spindle; transporting the wafer carrier toward the spindle; detachably mounting the wafer carrier on the upper end of the spindle for rotation therewith; and rotating the spindle and the wafer carrier while introducing one or more reactants into the reaction chamber. The invention also described several embodiments and variants of the method of the invention.
Claims15
A method of growing epitaxial layers on one or more wafers by a chemical vapor deposition in a reaction chamber including a rotatable spindle having an upper end, said method comprising:
- a) providing a wafer carrier having a surface for retaining said one or more wafers;
- b) placing said one or more wafers on said surface of said wafer carrier while said wafer carrier is in a loading position separated from said spindle;
- c) detachably mounting said wafer carrier on said upper end of said spindle for rotation therewith;
- and
- d) rotating said spindle and said wafer carrier while introducing one or more reactants into said reaction chamber.
Dependencies are inferred from the claim text.