De novo processing of electronic materials
AssigneeCalifornia Institute of Technology
InventorsWilliam A. Goddard, III, Gyeong S. Hwang
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AssigneeCalifornia Institute of Technology
InventorsWilliam A. Goddard, III, Gyeong S. Hwang
Estimating the term…
Computer programs and computer-implemented methods for predicting from first principles the behavior of dopants and defects in the processing of electronic materials. The distribution of dopant and defect components in a substrate lattice is predicted based on external conditions and fundamental data for a set of microscopic processes that can occur during material processing operations. The concentration behavior of one or more fast components is calculated in two stages, by solving a first relationship for a time period before the fast component reaches a pseudo steady state at which the concentration of the fast component is determined by concentrations of one or more second components, and by solving a second relationship for a time period after the first component reaches the pseudo steady state. Application of these methods to modeling ultrashallow junction processing is also described.
A computer implemented method for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material, the method comprising:
A computer program product, tangibly stored on a computer-readable medium, for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material, comprising instructions operable to cause a programmable processor to:
Dependencies are inferred from the claim text.