Integrated circuit with bonding layer over active circuitry

An integrated circuit device, comprising:

• a silicon substrate;
• an active circuit fabricated on said substrate;
• a metallization layer over said active circuit and coupled to said active circuit;
• an electrically conductive bonding surface positioned over said active circuit and said metallization layer, said bonding surface having connector stacks to said metallization layer, each of said stacks being comprised of a stack of the following electrically conductive layers in succession:
• an electrically conductive seed metal layer in contact with said metallization layer capable of providing an adhesive and conductive layer for electroplating on its surface, an electroplated support layer secured to said seed metal layer, and at least one wire bonding layer on said support layer;
• and
• at least one wire bonded to said bonding surface.

An integrated circuit device, comprising:

• a semiconductor substrate:
• an active circuit disposed on said substrate;
• a metallization layer over said active circuit and coupled to said active circuit;
• an electrically conductive bonding surface positioned over said active circuit, said bonding surface having connector stacks to said metallization layer, each of said stacks being comprised of a stack of the following electrically conductive layers in succession:
• an electrically conductive seed metal layer capable of providing an adhesive and conductive layer for electroplating on its surface in contact with said metallization layer, an electroplated support layer secured to said seed metal layer, and at least one flip chip connection layer on said support layer;
• and
• at least one flip chip bump deposited on said flip chip connection layer over said active circuit.