Method and apparatus for measuring thickness of thin film

A method of measuring a thickness of a thin film as a measurement object formed on a substrate using a value of substrate current that flows in the substrate upon applying an electron beam to the thin film, the method comprising the steps of:

• acquiring reference data representing a correlation between film thicknesses and substrate current values with respect to standard samples;
• acquiring the value of substrate current that flows in the substrate upon applying an electron beam to the thin film formed on the substrate;
• correcting the substrate current value taking into account an influence of a configuration of the surface of the substrate in the neighborhood of the thin film;
• and
• calculating the thickness of the thin film based on the corrected substrate current value taking into account the reference data.

An apparatus for measuring a thickness of a thin film as a measurement object using a value of substrate current that flows in a substrate upon applying an electron beam to the thin film formed on the substrate, the apparatus comprising:

• a reference data acquiring section for acquiring reference data representing a correlation between film thicknesses and substrate current values with respect to standard samples;
• a measured data acquiring section for acquiring a value of substrate current that flows in the substrate upon applying an electron beam to the thin film as the measurement object formed on the substrate;
• a correction processing section for correcting the substrate current value taking into account an influence of a charge distribution generated in the neighborhood of the thin film due to the application of the electron beam;
• and
• a calculation processing section for calculating the thickness of the thin film as the measurement object based on the corrected substrate current value taking into account the reference data.

An apparatus for measuring a thickness of a thin film as a measurement object using a value of substrate current that flows in a substrate upon applying an electron beam to the thin film formed on the substrate, the apparatus comprising:

• a reference data acquiring section for acquiring reference data representing a correlation between film thicknesses and substrate current values with respect to standard samples;
• a measured data acquiring section for acquiring the value of substrate current that flows in the substrate upon applying an electron beam to the thin film as the measurement object formed on the substrate;
• a correction processing section for correcting the substrate current value taking into account an influence of a configuration of the surface of the substrate in the neighborhood of the thin film;
• and
• a calculation processing section for calculating the thickness of the thin film as the measurement object based on the corrected substrate current value taking into account the reference data.

A program for causing a computer to execute a method of measuring a thickness of a thin film as a measurement object using a value of substrate current that flows in a substrate upon applying an electron beam to the thin film formed on the substrate, the method comprising the steps of:

• acquiring reference data representing a correlation between film thicknesses and substrate current values with respect to standard samples;
• acquiring the value of substrate current that flows in the substrate upon applying an electron beam to the thin film as the measurement object formed on the substrate;
• correcting the substrate current value taking into account an influence of a charge distribution generated in the neighborhood of the thin film due to the application of the electron beam;
• and
• calculating the thickness of the thin film as the measurement object based on the corrected substrate current value taking into account the reference data.

A program for causing a computer to execute a method of measuring a thickness of a thin film as a measurement object using a value of substrate current that flows in a substrate upon applying an electron beam to the thin film formed on the substrate, the method comprising the steps of:

• acquiring reference data representing a correlation between film thicknesses and substrate current values with respect to standard samples;
• acquiring the value of substrate current that flows in the substrate upon applying an electron beam to the thin film as the measurement object formed on the substrate;
• correcting the substrate current value taking into account an influence of a configuration of the surface of the substrate in the neighborhood of the thin film;
• and
• calculating the thickness of the thin film as the measurement object based on the corrected substrate current value taking into account the reference data.