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US 6,682,963 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorAkira Ishikawa
Life of this patent
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorAkira Ishikawa
Estimating the term…
A method of realizing an active matrix display device having flexibility is provided. Further, a method for reducing parasitic capacitance between wirings formed on different layers is provided. After fixing a second substrate to a thin film device formed on a first substrate by bonding, the first substrate is removed, and wirings and the like are formed in the thin film device. The second substrate is removed next, and an active matrix display device having flexibility is formed. Further, parasitic capacitance can be reduced by forming wirings, after removing the first substrate, on the side in which a gate electrode over an active layer is not formed.
A method of manufacturing a semiconductor device comprising the steps of:
A method of manufacturing a semiconductor device, the method comprising:
A method of manufacturing a semiconductor device, the method comprising:
A method of manufacturing an active matrix liquid crystal display device, the method comprising:
A method of manufacturing a semiconductor device, the method comprising:
A method of manufacturing a semiconductor device, the method comprising:
A method of manufacturing a semiconductor device comprising the steps of:
A method of manufacturing a semiconductor device comprising the steps of:
A method of manufacturing a semiconductor device comprising the steps of:
A method of manufacturing a semiconductor device comprising the steps of:
A method of manufacturing a semiconductor device, the method comprising:
A method of manufacturing a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Of multiple TFTs: using temporary substrates
Active matrix addressed cells: in which the switching element is a three-electrode device
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…
Characterised by multiple TFTs: interconnections, e.g. scanning lines
Term ended 14 Sep 2021 (estimated)
1. Field of the Invention
The present invention relates to a method of manufacturing a semiconductor device, and in particular, it relates to a method of manufacturing a thin, flexible (having a flexible property) semiconductor device. Further, the present invention relates to a method of reducing parasitic capacitance which is generated between wirings formed on differing layers through insulating films. Note that the term semiconductor device in this specification indicates general devices which function by utilizing semiconductor properties, and that in particular, the present invention can be suitably applied to integrated circuits using elements having SOI (silicon on insulator) structures in which a semiconductor layer is formed on an insulator, to active matrix liquid crystal display devices structured using thin film transistors (TFTs), to active matrix EL display devices, and the like. The term thin film device indicates an electronic device containing a thin film transistor (TFT) structured using a semiconductor thin film, and at least one element from among elements such as wirings, conductive layers, resistors, and capacitive elements.
2. Description of the Related Art
In the accompanying drawings:
FIGS. 1A to 1D are diagrams showing an embodiment mode of the present invention;
FIGS. 2A and 2B are diagrams showing an embodiment mode of the present invention;
[Embodiment Mode 1]
A method of manufacturing an active matrix liquid crystal display device using the present invention is explained using FIG. 1A to FIG. 3C.
First, a thin film device (which becomes a thin film device 102) is manufactured on a TFT formation substrate 101 as a first substrate. A leveling film 103 may be added, leveling a surface for bonding a second substrate. (See FIG. 1A.)