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US 6,677,173 B2Granted
Method of manufacturing a nitride semiconductor laser with a plated auxiliary metal substrate
AssigneePioneer Corporation
InventorHiroyuki Ota
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AssigneePioneer Corporation
InventorHiroyuki Ota
Estimating the term…
The disclosure is a method of manufacturing a nitride semiconductor laser wherein a plurality of crystal layers made of group III nitride semiconductors, including an active layer, are successively stacked on an underlayer. The method includes the steps of forming the plurality of crystal layers on the underlayer formed on a substrate, forming an electrode layer on the outermost surface of the crystal layers, plating a metal film onto the electrode layer, irradiating an interface between the substrate and the underlayer with light through the substrate toward so as to form a region of decomposed substances of the nitride semiconductor, delaminating the underlayer that supports the crystal layers from the substrate along the decomposed substance region, and cleaving the underlayer with the crystal layers so as to form cleaved planes constituting a laser resonator.
A method of manufacturing a nitride semiconductor laser having a plurality of crystal layers made of group III nitride semiconductors including an active layer and successively stacked on an underlayer made of a group III nitride semiconductor, comprising the steps of:
A method for separating a first substrate from a nitride semiconductor wafer which is obtained by successively stacking at least one crystal layer made of group III nitride semiconductor on the first substrate, comprising the steps of:
Dependencies are inferred from the claim text.