Semiconductor laser device and method for producing the same

A semiconductor laser device, comprising a substrate, a light emission region provided on the substrate, and an alignment stripe provided on the substrate so as to be adjacent to the light emission region, wherein:

• the light emission region includes
• a first active layer stripe having a layered structure including a first waveguide layer, an active layer, and a second waveguide layer, the active layer being interposed between the first waveguide layer and the second waveguide layer,
• a first buried layer having a first polarity and formed so as to cover side faces of the active layer stripe,
• a second buried layer having a second polarity opposite the first polarity and formed on the first buried layer, and
• a third buried layer having the first polarity and formed on the second buried layer and the active layer stripe;
• and
• the alignment stripe includes
• a second active layer stripe having a layered structure including the first waveguide layer, the active layer, and the second waveguide layer, and
• a selective growth mask formed on the second active layer stripe and formed of a material on which the first buried layer, the second buried layer and the third buried layer are incapable of growing.