Contact structure for semiconductor lasers
AssigneeJDS Uniphase Corporation
InventorsGottfried Rainer Dohle, Vincent V. Wong
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Abstract
An improved electrical contact structure can be manufactured by plating a component of a first material such as molybdenum with a second material such as copper or silver. The first and second materials are selected to provide a desired effective coefficient of thermal expansion (CTE) and electrical conductivity. The contact structure can be made very thin for implementations in which multiple lasers are to be stacked closely together. The manufacturing processing can be carried out very inexpensively by first etching the outline of multiple components in a sheet of the first material and then plating the etched sheet with the second material.
Claims8
A laser module comprising:
- a PN-junction semiconductor laser having a coefficient of thermal expansion (CTE) and having a P-side and an N-side;
- and
- a contact structure affixed by affixing means to a surface of the PN-junction semiconductor laser on either the P-side or the N-side, wherein the contact structure comprises;
- a first component comprised of a layer of a first material having a first CTE;
- and
- a second component comprised of a layer of plated with a second material having a second CTE plated on opposing surfaces of the first component, wherein the first and second components have an overall thickness such that the contact structure has an effective CTE that matches the CTE of the semiconductor laser more closely than either the second CTE or the first CTE;
- and wherein the layers of the second material are of substantially equal thickness to balance thermal stresses between the first component and the second component.
Dependencies are inferred from the claim text.