Memory device tester and method for testing reduced power states

A method of testing for the proper operation of a reduced power state in a memory device having rows and columns of memory cells, the method comprising:

• issuing a relax command (RLX) to the memory device to put the memory device in the reduced power state, wherein the relax command is decoded by a row decoder of the memory device;
• issuing a second command to the memory device;
• and
• comparing a data value returned by the memory device against an expected value to verify that the memory device did not decode the second command.

A method of testing for the proper operation of a reduced power state in a memory device having rows and columns of memory cells, the method comprising:

• issuing a command to the memory device to put the memory device in the reduced power state, wherein the command is decoded by a column decoder of the memory device;
• issuing a second command to the memory device;
• and
• comparing a data value returned by the memory device against an expected value to verify that the memory device did not decode the second command.

A method of testing for the proper operation of a reduced power state in a memory device having rows and columns of memory cells, the method comprising:

• issuing a first command to the memory device to put the memory device in the reduced power state, wherein the command is decoded by one of a row decoder or a column decoder of the memory device;
• issuing a second command to the memory device, wherein the second command is directed to the column decoder;
• comparing a first data value returned by the memory device against an expected value to verify that the column decoder did not decode the second command;
• issuing a third command to the memory device to put the memory device in an attention state;
• issuing a fourth command to the memory device, wherein the fourth command is directed to the column decoder;
• and
• comparing a second data value returned by the memory device against an expected value to verify that the column decoder decoded the fourth command.

A method of testing for the proper operation of a reduced power state in a memory device having rows and columns of memory cells, the method comprising:

• issuing a relax command (RLX) to the memory device to put the memory device in the reduced power state, wherein the relax command is decoded by a row decoder of the memory device;
• issuing a second command to the memory device;
• comparing a first data value returned by the memory device against an expected value to verify that the column decoder did not decode the second command;
• issuing a third command to the memory device to put the memory device in an attention state;
• issuing a fourth command to the memory device, wherein the fourth command is directed to the column decoder;
• and
• comparing a second data value returned by the memory device against an expected value to verify that the column decoder decoded the fourth command.

A method of testing for the proper operation of a reduced power state in a memory device having rows and columns of memory cells, the method comprising:

• issuing a command to the memory device to put the memory device in the reduced power state, wherein the command is decoded by a column decoder of the memory device;
• issuing a second command to the memory device;
• comparing a first data value returned by the memory device against an expected value to verify that the column decoder did not decode the second command;
• issuing a third command to the memory device to put the memory device in an attention state;
• issuing a fourth command to the memory device, wherein the fourth command is directed to the column decoder;
• and
• comparing a second data value returned by the memory device against an expected value to verify that the column decoder decoded the fourth command.

A method of testing for the proper operation of a reduced power state in a memory device having rows and columns of memory cells, the method comprising:

• issuing a first command to the memory device to put the memory device in the reduced power state, wherein the command is decoded by one of a row decoder or a column decoder of the memory device;
• issuing a first calibrate command to the memory device;
• issuing a second command to the memory device to cause the memory device to leave the reduced power state;
• issuing a second calibrate command to the memory device;
• and
• comparing a data value returned by the memory device against an expected value.