Magnetoresistive random access memory and method for reading/writing digital information to such a memory

A digital magnetic memory cell device for reading and/or writing operations comprising:

• a first and a second magnetic layer, each having a magnetization that is aligned parallel or anti-parallel relative to one another for the storage of digital information, wherein at least said first magnetic layer exhibits a magnetic anisotropy;
• an intermediate layer disposed between the first and the second magnetic layers;
• at least two intersecting printed conductors that conduct reading and writing currents and that intersect in an intersection region of said first and second magnetic layers to thereby define a memory cell;
• means for reversing the magnetization of at least one of the first and second magnetic layers from a parallel to an anti-parallel alignment and vice versa, wherein the means for reversing comprises device means for producing said reading and writing currents on first and second printed conductors, which comprise said at least two intersecting printed conductors;
• wherein the first and second printed conductors intersect at a predetermined angle β and wherein said reading and/or writing currents have a pulse duration <10 ns under the following conditions:
• a set of points, (±x0,0),(0,±y0), are located in non-switching regions, in which the reading and/or writing currents that are applied to the first and second printed conductors lead to no reversing of the magnetization of the first and second magnetic layers outside said memory cell;
• a resulting field pulse, which is characterized by a switching point (x0,y0), leads to reversal of the magnetization in said memory cell;
• all points (±x0,0),(0,+y0) and the switching point (x0,y0) are placed as far distant as possible from a separating line between said memory cell and said non-switching regions;
• whereby a complete and reliable reversal of the magnetization from a parallel alignment to an anti-parallel alignment and vice versa is achieved in said memory cell.