Magneto-resistance effect head and magnetic storage device employing the head

A magneto-resistance effect head, comprising:

• a lower electrode-cum-magnetic shield layer;
• a magnetic gap adjusting layer, which is made of a nonmagnetic conductor and formed on the lower electrode-cum-magnetic shield layer;
• a pair of vertical bias layers formed on the magnetic gap adjusting layer via a space;
• a free magnetic layer which is formed in the space above the magnetic gap adjusting layer so that both end parts are contacted with the vertical bias layers, and changes its magnetization direction depending on applied magnetic fields;
• a nonmagnetic layer formed on the free magnetic layer;
• a fixed magnetic layer which is formed on the non magnetic layer and whose magnetization direction is fixed;
• a fixing layer, which is formed on the fixed magnetic layer and fixes the magnetization direction of the fixed magnetic layer;
• an insulation layer formed so as to fill the surrounding of the fixed magnetic layer and the fixing layer;
• and
• an upper electrode-cum-magnetic shield layer formed on the insulation layer and the fixing layer.

A magneto-resistance effect head, comprising:

• a lower electrode-cum-magnetic shield layer;
• a fixing layer formed on the lower electrode-cum-magnetic shield layer;
• a fixed magnetic layer which is formed on the fixing layer and whose magnetization direction is fixed by the fixing layer;
• a nonmagnetic layer formed on the fixed magnetic layer;
• a free magnetic layer, which is formed on a part of the nonmagnetic layer and changes its magnetization direction depending on applied magnetic fields;
• an insulation layer formed so as to fill the surrounding of the free magnetic layer;
• a pair of vertical bias layers which is formed on the insulation layer so as to be contacted with both end parts of the free magnetic layer and apply magnetic fields to the free magnetic layer;
• a magnetic gap adjusting layer which is made of a nonmagnetic conductor and formed on the pair of vertical bias layers and the free magnetic layer;
• and
• an upper electrode-cum-magnetic shield layer formed on the magnetic gap adjusting layer.

A magneto-resistance effect head, comprising:

• a magneto-resistance effect element whose resistance value changes depending on applied magnetic fields, said magneto-resistance effect element comprising
• a free magnetic layer whose magnetization direction changes depending on applied magnetic fields,
• a nonmagnetic layer,
• a fixed magnetic layer whose magnetization direction is fixed, and
• a fixing layer for fixing the magnetization direction of the fixed magnetic layer;
• a first electrode-cum-magnetic shield layer which is disposed at the free magnetic layer side of the magneto-resistance effect element and functions both as electrode and magnetic shield of the magneto-resistance effect element;
• a second electrode-cum-magnetic shield layer which is disposed at the fixing layer side of the magneto-resistance effect element and functions both as electrode and magnetic shield of the magneto-resistance effect element;
• and
• a magnetic gap adjusting layer which is made of a nonmagnetic conductor and provided between the free magnetic layer and the first electrode-cum-magnetic shield layer, wherein the first and second electrodes-cum-magnetic shield layers, the free magnetic layer, the nonmagnetic layer, the fixed magnetic layer, and the fixing layer are in one direction,
• further comprising an undercoat between the free magnetic layer and the magnetic gap adjusting layer.

A magneto-resistance effect device comprising:

• a magneto-resistance effect element whose resistance value changes depending on applied magnetic fields, said magneto-resistance effect element comprising
• a free magnetic layer whose magnetization direction changes depending on applied magnetic fields,
• a nonmagnetic layer,
• a fixed magnetic layer whose magnetization direction is fixed, and
• a fixing layer for fixing the magnetization direction of the fixed magnetic layer;
• a first electrode-cum-magnetic shield layer which is disposed at the free magnetic layer side of the magneto-resistance effect element and, functions both as electrode and magnetic shield of the magneto-resistance effect element;
• a second electrode-cum-magnetic shield layer which is disposed at the fixing layer side of the magneto-resistance effect element and functions both as electrode and magnetic shield of the magneto-resistance effect element;
• and
• a magnetic gap adjusting layer which is made of a nonmagnetic conductor and provided between the free magnetic layer and the first electrode-cum-magnetic shield layer, wherein the first and second electrodes-cum-magnetic shield layers, the free magnetic layer, the nonmagnetic layer, the fixed magnetic layer, and the fixing layer are laminated in one direction, and
• a protection layer between the free magnetic layer and the magnetic gap adjusting layer.

A magneto-resistance effect device, comprising:

• a lower electrode-cum-magnetic shield layer;
• a magnetic gap adjusting layer, which is made of a nonmagnetic conductor and formed on the lower electrode-cum-magnetic shield layer;
• a pair of vertical bias layers formed on the magnetic gap adjusting layer via a space;
• a free magnetic layer which is formed in the space above the magnetic gap adjusting layer so that both end parts are contacted with the vertical bias layers, and changes its magnetization direction depending on applied magnetic fields;
• a nonmagnetic layer formed on the free magnetic layer;
• a fixed magnetic layer which is formed on the nonmagnetic layer and whose magnetization direction is fixed;
• a fixing layer, which is formed on the fixed magnetic layer and fixes the magnetization direction of the fixed magnetic layer;
• an insulation layer formed so as to fill the surrounding of the fixed magnetic layer and the fixing layer;
• and
• an upper electrode-cum-magnetic shield layer formed on the insulation layer and the fixing layer.

A magneto-resistance effect device, comprising:

• a lower electrode-cum-magnetic shield layer;
• a fixing layer formed on the lower electrode-cum-magnetic shield layer
• a fixed magnetic layer which is formed on the fixing layer and whose magnetization direction is fixed by the fixing layer;
• a nonmagnetic layer formed on the free magnetic layer;
• a free magnetic layer, which is formed on a part of the nonmagnetic layer and changes its magnetization direction depending on applied magnetic fields;
• an insulation layer formed so as to fill the surrounding of the free magnetic layer;
• a pair of vertical bias layers which is formed on the insulation layer so as to be contacted with both end parts of the free magnetic layer and apply magnetic fields to the free magnetic layer;
• a magnetic gap-adjusting layer which is made of a nonmagnetic conductor and formed on the pair of vertical bias layers and the free magnetic layer;
• and
• an upper electrode-cum-magnetic shield layer formed on the magnetic gap adjusting layer.

A magneto-resistance effect device comprising:

• a magneto-resistance effect element whose resistance value changes depending on applied magnetic fields, said magneto-resistance effect element comprising
• a free magnetic layer whose magnetization direction changes depending on applied magnetic fields,
• a nonmagnetic layer,
• a fixed magnetic layer whose magnetization direction is fixed, and
• a fixing layer for fixing the magnetization direction of the fixed magnetic layer;
• a first electrode-cum-magnetic shield layer which is disposed at the free magnetic layer side of the magneto-resistance effect element and, functions both as electrode and magnetic shield of the magneto-resistance effect element;
• a second electrode-cum-magnetic shield layer which is disposed at the fixing layer side of the magneto-resistance effect element and functions both as electrode and magnetic shield of the magneto-resistance effect element;
• and
• a magnetic gap adjusting layer which is made of a nonmagnetic conductor and provided between the free magnetic layer and the first electrode-cum-magnetic shield layer, wherein the first and second electrodes-cum-magnetic shield layers, the free magnetic layer, the nonmagnetic layer, the fixed magnetic layer, and the fixing layer are laminated in one direction,
• further comprising an undercoat layer between the free magnetic layer and the magnetic gap adjusting layer.