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US 6,674,305 B1Granted
Method of forming a semiconductor device and structure therefor
AssigneeSemiconductor Components Industries, LLC
InventorsSenpeng Sheng, Frank Dover, Barry Heim
Life of this patent
Estimating the term…
Abstract
A method of forming an output transistor (11) protects the output transistor (11) from overvoltage conditions on an output (13). The body of the output transistor (11) is coupled to the gate of the transistor (11) prior to the high voltage being applied to the output (13).
Claims16
A method of protecting a semiconductor device comprising:
- forming a semiconductor device having an output, having a voltage input coupled to receive a first voltage, and having an output transistor including forming the output transistor having a body, a control electrode, a first current carrying electrode coupled to the voltage input, and a second current carrying electrode coupled to the output;
- and
- forming the semiconductor device to couple the control electrode to the body prior to the output reaching a second voltage that is no less than the first voltage.
A method of protecting a semiconductor device comprising:
- forming a semiconductor device having an output, having a voltage input coupled to receive a first voltage, and having a P-channel output transistor that is devoid of a threshold adjustment doping including forming the output transistor having a body, a control electrode, a first current carrying electrode coupled to the voltage input, and a second current carrying electrode;
- and
- forming the semiconductor device to couple the control electrode to the body prior to the output reaching a second voltage that is no less than the first voltage.
A method of protecting a semiconductor device comprising:
- forming a semiconductor device having a voltage input coupled to receive a first voltage, having an output, and having an output transistor;
- forming the output transistor having a body, a first current carrying electrode coupled to the voltage input, a control electrode, and a second current carrying electrode coupled to the output;
- and
- coupling the control electrode to the body prior to coupling the control electrode and the body to the output.
1 more element
A method of protecting a semiconductor device comprising:
- forming a semiconductor device having a voltage input coupled to receive a first voltage, having an output, and having an output transistor;
- forming the output transistor having a body, a first current carrying electrode coupled to the voltage input, a control electrode, and a second current carrying electrode coupled to the output;
- and
- coupling the output transistor to receive a first control signal on a control electrode and coupling a first transistor to receive a second control signal that is opposite to the first control signal and responsively couple the control electrode to the body prior to coupling the control electrode and the body to the output.
1 more element
A semiconductor device having a structure comprising:
- a first transistor having a first current carrying electrode coupled to a voltage input, a control electrode coupled to receive a first signal on a first signal input of the semiconductor device, a body, and a second current carrying electrode coupled to an output of the semiconductor device, the first transistor having a threshold voltage;
- a second transistor having a first current carrying electrode coupled to the body of the first transistor, a second current carrying electrode coupled to the control electrode of the first transistor, and a control electrode coupled to receive a second signal on a second signal input of the semiconductor device wherein the second signal is approximately opposite in polarity to the first signal, the second transistor having the threshold voltage;
- a third transistor having a first current carrying electrode coupled to the output, a second current carrying electrode coupled to the body of the first transistor, and a control electrode coupled to the voltage input, the third transistor having the threshold voltage;
- and
- a fourth transistor having a first current carrying electrode coupled to the output, a second current carrying electrode coupled to the control electrode of the first transistor, and a control electrode coupled to the voltage input, the fourth transistor having the threshold voltage.
2 more elements
Dependencies are inferred from the claim text.