Semiconductor device with titanium silicon oxide layer
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Pierre Fazan
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Abstract
A semiconductor device comprised of a substantially conformal layer of titanium silicon oxide deposited on a semiconductor substrate. The layer of titanium silicon oxide is substantially free of chlorine related impurities. The layer of titanium silicon oxide may have a ratio of silicon to titanium from about 0.1 to about 1.9. The layer of titanium silicon oxide may have a dielectric constant from about 10 to about 30, and a thickness from about 15 angstroms to about 500 angstroms.
Claims7
A semiconductor device, comprising a semiconductor substrate having a substantially conformal layer of titanium silicon oxide deposited thereon, said layer of titanium silicon oxide being substantially free of chlorine related impurities, said layer having a ratio of silicon to titanium of from about 0.1 to about 1.9, said layer having a dielectric constant of from about 10 to about 30, and said layer having a thickness of from about 15 Å to about 500 Å.
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- a titanium silicon oxide dielectric film being substantially free of chlorine related impurities, said film having a ratio of silicon to titanium of from about 0.1 to about 1.9, formed on the semiconductor substrate by exposing the semiconductor substrate to gaseous titanium organometallic precursor, reactive silane-based gas, and gaseous oxidant under conditions effective to cause the gaseous titanium organometallic precursor, reactive silane-based gas and gaseous oxidant to combine and deposit a layer of titanium silicon oxide on the semiconductor substrate.
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- a titanium silicon oxide dielectric film being substantially free of chlorine related impurities, said film having a ratio of silicon to titanium of from about 0.1 to about 1.9, formed on the semiconductor substrate by the steps of:
- a) positioning the semiconductor substrate within a non-plasma cold wall CVD reactor;
- b) maintaining the semiconductor substrate at a temperature of from about 100° C. to about 500° C.;
- c) maintaining a pressure within the reactor at from about 150 mTorr to about 100 Torr;
- and
- d) introducing gaseous reactants comprising gaseous TDMAT, silane, oxygen, and a carrier gas into the reactor, wherein said TDMAT is introduced at a flow rate of from about 2 sccm to about 50 sccm, said silane is introduced at a flow rate of from about 100 sccm to about 2000 sccm, said oxygen is introduced at a flow rate of from about 200 sccm to about 4000 sccm, and said carrier gas is introduced at a total flow rate of from about 50 sccm to about 2000 sccm.
Dependencies are inferred from the claim text.